Thin Film Ferroelectric Materials and Devices
Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. The primary focus of Thin Film Ferroelectric...
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Thin Film Ferroelectric Materials and Devices is a compilation of current research and development in two very important ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). Given the rapid pace of development and the broad scope of the general topic of ferroelectric materials, readers will benefit from such a focused presentation. The primary focus of Thin Film Ferroelectric Materials and Devices is to expound the materials and device aspects of these technologies. All the chapters have been written by leaders in their fields. Therefore, each chapter provides a comprehensive treatment of a specific topic of relevance to these two technologies. Thin Film Ferroelectric Materials and Devices will be of great value to materials and device scientists, device and process engineers, students, and postdoctoral associates. Furthermore, this compilation will serve as a concise introduction for new entrants to this exciting field. Booknews This compilation of nine papers on the burgeoning R & D in this field focuses on two breakthrough ferroelectric device technologies: ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-volatile Ferroelectric Random Access Memories (NV-DRAM's). In-depth treatment is provided of such aspects of thin film materials and devices as: elastic domains in ferroelectric epitaxial films, layered perovskite thin films and memory devices, chemical vapor deposition, and degradation mechanisms and reliability issues. For materials and device scientists and device and process engineers. Annotation c. by Book News, Inc., Portland, Or.
PrefaceCh. 1(Ba,Sr)TiO[subscript 3] Thin Films for DRAM's1Ch. 2(Ba,Sr)TiO[subscript 3] Films and Process Integration For DRAM Capacitor43Ch. 3Elastic Domains in Ferroelectric Epitaxial Films71Ch. 4Study of Growth Processes in Ferroelectric Films and Layered Heterostructures via In Situ, Real-Time Ion Beam Analysis91Ch. 5Layered Perovskite Thin Films and Memory Devices115Ch. 6Pb(Zr,Ti)O[subscript 3] Based Thin Film Ferroelectric Nonvolatile Memories145Ch. 7Chemical Vapor Deposition of Ferroelectric Thin Films167Ch. 8Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films199Ch. 9Low Voltage Performance in Lead Based Ferroelectric Thin Film Memory Elements With (La,Sr)CoO[subscript 3] Electrodes221Index243
\ BooknewsThis compilation of nine papers on the burgeoning R & D in this field focuses on two breakthrough ferroelectric device technologies: ferroelectrics for Dynamic Random Access Memories (DRAM's) and Non-volatile Ferroelectric Random Access Memories (NV-DRAM's). In-depth treatment is provided of such aspects of thin film materials and devices as: elastic domains in ferroelectric epitaxial films, layered perovskite thin films and memory devices, chemical vapor deposition, and degradation mechanisms and reliability issues. For materials and device scientists and device and process engineers. Annotation c. by Book News, Inc., Portland, Or.\ \
