CCD Image Sensors in Deep-Ultraviolet: Degradation Behavior and Damage Mechanisms
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As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.
1Introduction12Overview of CCD73CCD imaging in the ultraviolent (UV) regime234Silicon455Silicon dioxide516Si-SiO[subscript 2] interface817General effects of radiation958Effects of radiation on CCDs1099UV-induced effects in Si12110UV laser induced efforts in SiO[subscript 2]12511UV laser induced effects at the Si-SiO[subscript 2] interface15312CCD measurements at 157 nm15713Design optimizations for future research19514Concluding remarks207
