Group IV Heterostructures, Physics and Devices (Si, Ge, C, &agr;-Sn)
These proceedings contain the majority of papers presented at Symposium D, "Group IV heterostructures, physics and devices\ (Si,Ge,C,&agr;-Sn)", of the Spring Meeting of the European Materials Research Society, held at the Congress Centre,\ Strasbourg, France, 4-7 June 1996. This Symposium was attended by about 150 scientists from throughout the world, among whom 18\ were invited speakers.\ The aim of the Symposium was to discuss the most recent results in all fields of Group IV...
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These proceedings contain the majority of papers presented at Symposium D, "Group IV heterostructures, physics and devices(Si,Ge,C,&agr;-Sn)", of the Spring Meeting of the European Materials Research Society, held at the Congress Centre,Strasbourg, France, 4-7 June 1996. This Symposium was attended by about 150 scientists from throughout the world, among whom 18were invited speakers.The aim of the Symposium was to discuss the most recent results in all fields of Group IV heterostructures and devices from fundamental physics to industrial applications. Regular and invited contributions were then welcomed which addressed the different aspects of growth,the effects of strain relaxation, particularly in SiGeC alloys,the basic optical and electrical properties of heterostructures and low-dimensional structures, the microelectronic and optoelectronics, such as rare-earth doping techniques, was also selected. Except for minor changes, the order of papers presented in this special issue of Thin Solid Films closely follows the order of topics listed above as well as the order of sessions at the Symposium.
SponsorsPreface1Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates3Single-wafer Si and SiGe processes for advanced ULSI technologies11Atomic layer doping of SiGe by low pressure (rapid thermal) chemical vapor deposition15Real-time control of layer thickness in LPCVD Si/Si[subscript 88]Ge[subscript 12] HBT structures18Growth mechanisms of SiGe on (111) and (100) Si substrates22Defect-free strain relaxation in locally MBE-grown SiGe heterostructures27Time-resolved dislocation-related luminescence in strain-relaxed SiGe/Si33Combined characterization of group IV heterostructures and materials by spectroscopic ellipsometry and grazing X-ray reflectance37Relaxed epitaxial Si[subscript 1-x]Ge[subscript x] grown by MBE43Strain relaxation and thermal stability of the 3C-SiC(001)/Si(001) interface: A molecular dynamics study47Effects of substrate bias and rapid thermal processing on the luminescence of Si/SiGe multiple quantum wells grown by MBE50Quantification of germanium and boron in heterostructures Si/Si[subscript 1-x]Ge[subscript x]/Si by SIMS54UHV-CVD heteroepitaxial growth of Si[subscript 1-x]Ge[subscript x] alloys on Si(100) using silane and germane59Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition64Homoepitaxy of silicon at low temperature on clean and Ga-covered substrates69Cold-walled UHV/CVD batch reactor for the growth of Si[subscript 1-x]Ge[subscript x] layers72Growth of single-crystal Si, Ge and SiGe layers using plasma-assisted CVD76HRTEM study of Si[subscript 1-x]Ge[subscript x] multilayer80Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy84Surface morphology and reconstructions of ultra thin Si films grown by solid-phase epitaxy88Ternary SiGeC alloys: growth and properties of a new semiconducting material93Pseudomorphic Si[subscript 1-y]C[subscript y] and Si[subscript 1-x-y] alloy layers on Si98Improved growth morphology of Si-Ge-C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy105Optical and electrical properties of Si[subscript 1-x-y] thin films and devices112Local strains in Si[subscript 1-x-y]GE[subscript x]C[subscript y] alloys as deduced from vibrational frequencies118Near band edge photoluminescence from pseudomorphic tensially strained Si[subscript 0.985]C[subscript 0.015] alloy122RTCVD growth and characterization of SiGeC multi-quantum wells125Carbon and germanium distributions in Si[subscript 1-x-y]Ge[subscript x]C[subscript y] layers epitaxially grown on Si(001) by RTCVD129Infrared spectroscopy of strained Si[subscript 1-y]C[subscript y] alloys [actual symbol not reproducible] grown on silicon133Incorporation of substitutional carbon in Si and SiGe by laser processing in methane and propylene137Fermi-level pinning in Schottky diodes on IV-IV semiconductors: effect of Ge and C incorporation141Strain compensation in Si[subscript 1-x-y]Ge[subscript x]C[subscript y] layers prepared by ion implantation and excimer laser annealing145Comparison of Si[subscript 1-y]C[subscript y] films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition149New Ge substrate cleaning method for Si[subscript 1-x-y]Ge[subscript x]C[subscript y] MOMBE growth153Fabrication of a nanosize Si-tip coated with a thin diamond-like carbon film157Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices160Novel microscopic properties and the electronic structure of SiGe heterostructures and related systems166Spectroscopy of intersubband transitions in Si-Si[subscript 1-x]Ge[subscript x] quantum wells173Low-field magnetoresistance in Si/SiGe quantum wells179Thermoelectric power of the Si/Si[subscript 0.8] Ge[subscript 0.2] two-dimensional hole gas182Optical spectra and recombination in Si-Ge heterostructures186Local electric field effects in a SiGe quantum well investigated by photoluminescence190Recombination mechanisms via deep levels in RTCVD Si/Si[subscript 0.85]Ge[subscript 0.15]/Si double heterostructures194Si[subscript 1-x]Ge[subscript x]/Si valence band offset determination using current-voltage characteristics198Room-temperature electroluminescence from dislocations in silicon201Local-symmetry effects on light emissivity from SiGe quantum wells204Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge-Ge[subscript 1-x]Si[subscript x] heterostructures208Thermal emission of holes from confined levels in strained SiGe channel p-MOSFETS211Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition214Titanium metallization of Si/Ge alloys and superlattices217Erbium-silicon light-emitting diodes growth by molecular beam epitaxy: optical properties220Erbium doping of Si via ion-beam-induced epitaxial crystallization: another route to room-temperature photoluminescence223Highly oriented Si nanoparticles in SiO[subscript 2] created by Si molecular beam epitaxy with oxygen implantation227D.c. electric field induced second-harmonic generation spectroscopy of the Si(001)-SiO[subscript 2] interface: separation of the bulk and surface non-linear contributions231D.c electric-field-induced second-harmonic generation in Si-SiO[subscript 2] multiple
