High Dielectric Constant Materials
Search in google:
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
1The economic implications of Moore's law12Brief notes on the history of gate dielectrics in MOS devices333SiO[subscript 2] based MOSFETS : film growth and Si-SiO[subscript 2] interface properties454Oxide reliability issues915Gate dielectric scaling to 2.0-1.0 nm : SiO[subscript 2] and silicon oxynitride1236Optimal scaling methodologies and transistor performance1437Silicon oxynitride gate dielectric for reducing gate leakage and boron penetration prior to high-k gate dielectric implementation1958Alternative dielectrics for silicon-based transistors : selection via multiple criteria2239Materials issues for high-k gate dielectric selection and integration25310Designing interface composition and structure in high dielectric constant gate stacks28711Electronic structure of alternative high-k dielectrics31112Physicochemical properties of selected 4d, 5d, and rare earth metals in silicon35913High-k gate dielectric deposition technologies37914Issues in metal gate electrode selection for bulk CMOS devices41515CMOS IC fabrication issues for high-k gate dielectric and alternate electrode materials43516Characterization and metrology of medium dielectric constant gate dielectric films48317Electrical measurement issues for alternative gate stack systems52118High-k gate dielectric materials integrated circuit device design issues56719High-k crystalline gate dielectrics : a research perspective60720High-k crystalline gate dielectrics : an IC manufacturer's perspective63921Advanced MOS-devices667
