Semiconductor Interfaces and Microstructures
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Preface(1)Carrier transport in artificially structured two-dimensional semiconductor systems1(2)Miniband conduction in semiconductor superlattices31(3)Barrier width dependence of optical properties in semiconductor superlattices63(4)Radiative processes in GaAs/AlGaAs heterostructures93(5)Type-I-Type-II transition in GaAs/AIAs superlattices120(6)Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures149(7)Optical and magneto-optical properties of narrow In[subscript x]Ga[subscript 1-x]As-GaAs quantum wells168(8)Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources199(9)Properties of Cd[subscript 1-x]Mn[subscript x]Te films and Cd[subscript 1-x]Mn[subscript x]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy216(10)Zn[subscript 1-y]Cd[subscript y]Se[subscript 1-x]Te[subscript x] quatenary II-VI wide bandgap alloys and heterostructures238(11)Intersubband transitions in SiGe/Si quantum structures252(12)High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance280
