Semiconductor Quantum Wells And Superlattices For Long-Wavelength Infrared Detectors
This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.
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Now you can understand the basic properties of semiconductor quantum wells and superlattices, and see how they can be utilized for long-wavelength infrared detectors and imaging arrays.
ForewordPrefaceCh. 1Introduction to Long-Wavelength Infrared Quantum Detectors11.1Background11.2Quantum Detectors Based on Semiconductor Quantum Wells and Superlattices21.3GaAs/AlGa[subscript 1-x]As Multiple Quantum Wells81.4InAs/Ga[subscript 1-x]In[subscript x]Sb Strained-Layer Superlattices111.5Si/Si[subscript 1-x]Ge[subscript x] Multiple Quantum Wells13Ch. 2Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells192.2The Effective Mass Equation202.3Conduction Band States in Quantum Wells222.4The Finite Difference Method252.5Valence Band States282.6Effect of Strain on the Conduction and Valence Bands of Quantum Wells312.7Absorption Coefficient for the Conduction Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells37Ch. 3Long-Wavelength Infrared Photodetectors Based on Intersubband Transitions in III-V Semiconductor Quantum Wells553.2Fundamentals of Infrared Detection for Staring Applications593.3The Development of GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors623.4Performance Models for GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors773.5Device Optimization for Applications95Ch. 4Far-Infrared Materials Based on InAs/GalnSb Type II, Strained-Layer Superlattices1094.2Electronic Structure Theory of Semiconductor Superlattices1134.3InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Strained-Layer Superlattices1224.4Experimental Situation131Ch. 5Infrared Detectors Using SiGe/Si Quantum Well Structures1395.2Growth of SiGe Strained Layers1415.3Band Structures and Properties of SiGe Layers Under Strain1445.4Physics of Intersubband Transitions1525.5p-Type Intersubband Transition1805.6p-Type Intersubband and Free Carrier Detectors1945.7Prospective201Ch. 6Type III Superlattices for Long-Wavelength Infrared Detectors: The HgTe/CdTe System2076.2Band Structure Calculations2086.3Basic Materials Properties2136.4Properties Directly Affecting Detector Performance2356.5HgTe/CdTe Detector Fabrication247Index261
