Electrical And Thermal Characterization Of Mesfets, Hemts And Hbts
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.\
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Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations. Booknews Presents observations and an analysis of the way III-V transistor electrical characteristics change with operating temperature, and through device self-heating, with power dissipation. Covers physical modeling of III-V semiconductor devices, measuring temperature- dependent equivalent circuits, and circuit modeling. Annotation c. Book News, Inc., Portland, OR (booknews.com)
PrefaceCh. 1Introduction1Ch. 2Physical Modeling of III-V Semiconductor Devices5Ch. 3How to Measure Temperature-Dependent Equivalent Circuits31Ch. 4Self-Heating in Transistors55Ch. 5GaAs MESFET Equivalent Circuits (Room Temperature)75Ch. 6Temperature-Dependent MESFET Equivalent Circuits125Ch. 7HEMT Equivalent Circuits (Room Temperature)149Ch. 8Temperature Dependent HEMT Equivalent Circuits185Ch. 9Gate Currents in MESFETs and HEMTs203Ch. 10Heterojunction Bipolar Transistors213Ch. 11Circuit Modeling277Acronyms303About the Author305Index307
\ BooknewsPresents observations and an analysis of the way III-V transistor electrical characteristics change with operating temperature, and through device self-heating, with power dissipation. Covers physical modeling of III-V semiconductor devices, measuring temperature- dependent equivalent circuits, and circuit modeling. Annotation c. Book News, Inc., Portland, OR (booknews.com)\ \
